The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Aug. 31, 2007
Gary Bela Bronner, Stormville, NY (US);
David Michael Fried, Brewster, NY (US);
Jeffrey Peter Gambino, Westford, VT (US);
Leland Chang, New York, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
Viraj Y. Sardesai, Poughkeepsie, NY (US);
Gary Bela Bronner, Stormville, NY (US);
David Michael Fried, Brewster, NY (US);
Jeffrey Peter Gambino, Westford, VT (US);
Leland Chang, New York, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
Viraj Y. Sardesai, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a conductive spacer on a semiconductor device. The method includes depositing a polysilicon layer on the semiconductor device, selectively implanting dopant ions in the polysilicon layer on a first side of a transistor region of the semiconductor device to define a conductive spacer area, and removing the polysilicon layer except for the conductive spacer area. Optionally, a silicidation process can be performed on the conductive spacer area so that the conductive spacer is made up of metal silicide.