The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Dec. 19, 2007
Kangguo Cheng, Beacon, NY (US);
Gary B. Bronner, Stormville, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
Kangguo Cheng, Beacon, NY (US);
Gary B. Bronner, Stormville, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a vertical field effect transistor ('FET') is provided which includes a transistor body region and source and drain regions disposed in a single-crystal semiconductor-on-insulator ('SOI') region of a substrate adjacent a sidewall of a trench. The substrate includes a buried insulator layer underlying the SOI region and a bulk region underlying the buried insulator layer. A buried strap conductively connects the SOI region to a lower node disposed below the SOI region and a body contact extends from the transistor body region to the bulk region of the substrate, the body contact being insulated from the buried strap.