The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jun. 09, 2004
Jochen Beintner, Wappingers Falls, NY (US);
Gary B. Bronner, Stormville, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Byeong Y. Kim, Lagrangeville, NY (US);
Jochen Beintner, Wappingers Falls, NY (US);
Gary B. Bronner, Stormville, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Byeong Y. Kim, Lagrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a strained/SGOI structure that includes an active device region of a relaxed SiGe layer, a strained Si layer located atop the relaxed SiGe layer, a raised source/drain region located atop a portion of the strained Si layer, and a stack comprising at least a gate dielectric and a gate polySi located on another portion of the strained Si layer; and a raised trench oxide region surrounding the active device region. The present invention also provides a method of forming such a structure. In the inventive method, the gate dielectric is formed prior to trench isolation formation thereby avoiding many of the problems associated with prior art processes in which the trench oxide is formed prior to gate dielectric formation.