The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Oct. 29, 2003
Kangguo Cheng, Beacon, NY (US);
Ramachandra Divkaruni, Ossining, NY (US);
Gary Bela Bronner, Stormville, NY (US);
Carl John Radens, LaGrangeville, NY (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
Kangguo Cheng, Beacon, NY (US);
Ramachandra Divkaruni, Ossining, NY (US);
Gary Bela Bronner, Stormville, NY (US);
Carl John Radens, LaGrangeville, NY (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
International Business Machines Corp., Armonk, NY (US);
Abstract
In a DRAM cell having a trench, a cell capacitor and a cell transistor, a node conducting element connects the cell capacitor to the cell transistor and a collar is disposed about the node conducting element. The collar is disposed in the substrate at least partially, up to entirely outside of the trench. Because the collar is disposed in the substrate outside of the trench, it does not restrict the size of the trench opening. This enables sub-100 nm trenches, using techniques which are compatible with contemporary DRAM process steps. A strap is embedded into a top surface of the collar.