Albany, NY, United States of America

Gangadhara Raja Muthinti

This inventor holds 18 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2018-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gangadhara Raja Muthinti. Retrieved from https://idiyas.com/inventor/gangadhara-raja-muthinti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 38.9

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2018-2024

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Areas of Expertise:
Fingerprinting
Photomask
Optical Roughness
EUV Structures
Metallization
Interconnects
Overlay Metrology
Dielectric Damage
Selective Reflection Mask
Gate Contact
Critical Dimension
Characterization
18 patents (USPTO):Explore Patents

Title: Innovations by Gangadhara Raja Muthinti: A Pioneer in Semiconductor Technology

Introduction

Gangadhara Raja Muthinti, an accomplished inventor based in Albany, NY, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 18 patents, his work focuses on enhancing the reliability and security of semiconductor fabrication processes.

Latest Patents

Among his latest patents, two key innovations stand out. The first is on **Secure Fingerprinting of a Trusted Photomask**, which aims to authenticate photomasks used in the fabrication of integrated circuits (ICs) or wafers. This innovation ensures that customers can verify whether a trusted manufacturer has used the correct photomask or if there have been any unauthorized alterations. By implementing this technology, Muthinti addresses the critical need for security in the IC manufacturing process.

The second notable patent is for a **Semiconductor Device with Linerless Contacts**. This patent outlines methods for forming semiconductor devices that include the use of contact vias opened through a sacrificial material down to the contacts. The innovative design allows for selective deposition of a barrier on the sides of the contact vias, ensuring that the contacts remain exposed during the manufacturing process. This approach significantly enhances the efficiency and performance of semiconductor devices.

Career Highlights

Gangadhara Raja Muthinti has worked with renowned companies such as IBM and GlobalFoundries Incorporated, where he honed his skills and expertise in the semiconductor industry. His experience at these leading firms has enabled him to contribute valuable innovations that address complex challenges in IC fabrication.

Collaborations

Throughout his career, Muthinti has collaborated with talented individuals, including his coworkers Andrew Mark Greene and Benjamin David Briggs. These collaborations have played a vital role in sparking new ideas and driving innovation within the semiconductor technology landscape.

Conclusion

As an inventor, Gangadhara Raja Muthinti continues to push the boundaries of technology with his innovative patents. His work not only enhances the reliability and security of semiconductor manufacturing but also plays a significant role in advancing the industry as a whole. With each new patent, Muthinti solidifies his position as a key figure in the field of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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