The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Dec. 29, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alex Joseph Varghese, Ballston Lake, NY (US);

Marc A. Bergendahl, Rensselaer, NY (US);

Andrew M. Greene, Slingerlands, NY (US);

Dallas Lea, Niskayuna, NY (US);

Matthew T. Shoudy, Guilderland, NY (US);

Yann Mignot, Slingerlands, NY (US);

Ekmini A. De Silva, Slingerlands, NY (US);

Gangadhara Raja Muthinti, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/7682 (2013.01); H01L 21/7688 (2013.01); H01L 21/76805 (2013.01); H01L 21/76844 (2013.01);
Abstract

Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.


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