The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Feb. 05, 2020
International Business Machines Corporation, Armonk, NY (US);
Benjamin D. Briggs, Waterford, NY (US);
Cornelius Brown Peethala, Slingerlands, NY (US);
Michael Rizzolo, Albany, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Gen Tsutsui, Glenmont, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Gangadhara Raja Muthinti, Albany, NY (US);
Lawrence A. Clevenger, Rhinebeck, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor wafer has a top surface, a dielectric insulator, a plurality of narrow copper wires, a plurality of wide copper wires, an optical pass through layer over the top surface, and a self-aligned pattern in a photo-resist layer. The plurality of wide copper wires and the plurality of narrow copper wires are embedded in a dielectric insulator. The width of each wide copper wire is greater than the width of each narrow copper. An optical pass through layer is located over the top surface. A self-aligned pattern in a photo-resist layer, wherein photo-resist exists only in areas above the wide copper wires, is located above the optical pass through layer.