The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Jan. 08, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Gangadhara Raja Muthinti, Albany, NY (US);
Michael Rizzolo, Delmar, NY (US);
Oscar Van Der Straten, Guilderland Center, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/14 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
Integration of structures including an embedded magnetoresistive random access memory (MRAM) device such as a magnetic tunneling junction device includes pre-patterned etch stop layers to prevent excessive etching of the interlayer dielectric during a via open step.