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For the Inventor, By the Inventor

San Jose, CA, United States of America

Fu-Chang Hsu

This inventor holds 136 USPTO granted patents and 40 published patent applications, primarily in NAND Flash Memory (CPC class G11C16-10). Top assignees: Aplus Flash Technology, Inc., Neo Semiconductor, Inc., Aplus Integrated Circuits, Inc.. Active years: 1997-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Chang Hsu. Retrieved from https://idiyas.com/inventor/fu-chang-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 136 

% Patents Active = 72.8

Average Co-Inventor Count = 2.0

ph-index = 26

Forward Citations = 2,274(Granted Patents)

Forward Citations (Not Self Cited) = 2,052(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Taipei,, TW (1997)
  • Hsin-Chu, TW (1998)
  • Saratoga, CA (US) (2000 - 2001)
  • Taipei, TW (1997 - 2002)
  • San Jose, CA (US) (2001 - 2024)

Company Filing History:

goldMedal80 out of 110 
 
Aplus Flash Technology, Inc.
 patents
silverMedal25 out of 25 
 
Neo Semiconductor, Inc.
 patents
bronzeMedal15 out of 18 
 
Aplus Integrated Circuits, Inc.
 patents
4. 1 out of 1 
 
Abedneja Assets Ag L.l.c.
 patent
5. 1 out of 1 
 
Abedneja Assetts Ag L.l.c.
 patent
6. 1 out of 1 
 
Aplvs Flash Technology, Inc.
 patent
7. 11 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1997-2026

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Areas of Expertise:
NAND Flash Memory
3D Vertical Memory Arrays
Quantum Bit Array
CMOS Anti-Fuse Cell
Nonvolatile Memory
Dynamic Random Access Memory
Hybrid Memory Cell
Multi-Page Programming
SONOS EEPROM
Memory Array
Memory Cell Structures
Memory Integration
136 patents (USPTO):Explore Patents
1. 12769990 - Methods and apparatus for implementing neural networks using 3D non-volatile memory arrays (2026-10-20),
2. 12744086 - 3D cell and array structures (2026-09-22),
3. 12700455 - 3D cell and array structures (2026-08-04),
4. 12660151 - 3D memory cell structures with floating bodies (2026-06-16),
5. 12217808 - Methods and apparatus for NAND flash memory (2025-02-04),
6. 12165717 - Methods and apparatus for a novel memory array (2024-12-10),
7. 12142329 - Methods and apparatus for NAND flash memory (2024-11-12),
8. 12100460 - Methods and apparatus for NAND flash memory (2024-09-24),
9. 12029140 - Quantum bit array (2024-07-02),
10. 12002525 - Methods and apparatus for NAND flash memory (2024-06-04),
11. 11972811 - Methods and apparatus for NAND flash memory (2024-04-30),
12. 11723288 - Quantum bit array (2023-08-08),
13. 11522016 - 3D vertical memory array cell structures with individual selectors and processes (2022-12-06),
14. 11232835 - Methods and apparatus for reading NAND flash memory (2022-01-25),
15. 11205116 - Three-dimensional neural network array (2021-12-21),

Title: Fu-Chang Hsu: Revolutionizing Quantum Computing and Memory Storage

Introduction:

Fu-Chang Hsu, a brilliant inventor based in San Jose, CA, has made significant contributions to the fields of quantum computing and memory storage. With an impressive portfolio of 125 patents, Hsu continues to push the boundaries of innovation. This article explores his latest patents, career highlights, collaborations, and the impact of his work on the technology landscape.

Latest Patents:

Hsu's recent patents showcase his expertise in quantum computing and memory array cell structures. One such invention is the Quantum Bit Array, which revolutionizes the way we manipulate and control qubits. By introducing a control gate, pass gate, and innovative transistor channel design, Hsu's quantum bit array enhances the operation and functionality of these fundamental building blocks of quantum computing.

Another groundbreaking invention by Hsu is the 3D Vertical Memory Array Cell Structures with Individual Selectors and Processes. This patent describes a novel method to create three-dimensional vertical memory arrays using alternating metal and insulator layers. By implementing selector devices and depositing resistive or phase-change materials, Hsu's innovation enables higher density and more efficient memory storage.

Career Highlights:

Throughout his career, Hsu has been associated with companies at the forefront of technological advancements. He has contributed immensely to Aplus Flash Technology, Inc., where he harnessed his skills to develop cutting-edge solutions. Furthermore, Hsu's expertise was highly valued at Neo Semiconductor, Inc., where he played a vital role in shaping their innovative product offerings.

Collaborations:

Hsu's inventive journey has also involved collaboration with esteemed colleagues. One of his notable coworkers is Peter Wung Lee, whose domain expertise further enhanced the outcomes of their joint projects. Additionally, Hsing-Ya Tsao's contributions have strengthened Hsu's innovative endeavors, leading to breakthrough advancements in the field of quantum computing and memory technology.

Conclusion:

Fu-Chang Hsu's remarkable achievements, encompassing 125 patents, have significantly influenced the domains of quantum computing and memory storage. His latest patents, including the Quantum Bit Array and 3D Vertical Memory Array Cell Structures, demonstrate his commitment to pushing the boundaries of innovation. Hsu's career highlights with Aplus Flash Technology, Inc., and Neo Semiconductor, Inc., emphasize his valuable contributions to the industry. Collaborations with talented individuals such as Peter Wung Lee and Hsing-Ya Tsao have further propelled his groundbreaking work. As technology continues to evolve, Fu-Chang Hsu's inventions will undoubtedly leave a lasting impact on the field of innovations and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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