Icheon-si, South Korea

Hee Youl Lee

USPTO Granted Patents = 183 

Average Co-Inventor Count = 1.2

ph-index = 9

Forward Citations = 495(Granted Patents)

Forward Citations (Not Self Cited) = 457(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Daejun-Shi, KR (1997)
  • Daejeon, KR (1998)
  • Daegu, KR (1999)
  • Daejeon-Shi, KR (2001)
  • Ichon, KR (2002)
  • Ichon-Shi, KR (2004)
  • Icheon-shi, KR (2006)
  • Kyungki-Do, KR (2002 - 2009)
  • Kyeongki-Do, KR (2007 - 2011)
  • Icheon-si, Gyeonggi-do, KR (2020)
  • Incheon-si, KR (2018 - 2021)
  • Gyeonggi-do, KR (2011 - 2023)
  • Icheon-si, KR (2007 - 2024)
  • Icheon-si Gyeonggi-do, KR (2016 - 2024)

Company Filing History:


Years Active: 1997-2025

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Areas of Expertise:
Semiconductor Memory Device
Memory Device
Channel Precharge Operation
Voltage Control
Data Selection
Program Disturb Reduction
Inferior Permanent Magnet Electric Motor
Memory System
Voltage Generating Circuit
Programming Method
Multi-Bit Data Storage
Memory Controller
183 patents (USPTO):Explore Patents

Title: Hee Youl Lee: A Mastermind in Memory Device Innovations

Introduction:

In the realm of memory devices, one name shines bright - Hee Youl Lee. Hailing from Icheon-si, South Korea, Lee has made significant contributions to the field, accumulating an impressive 165 patents. Known for his expertise in memory device design, his latest patents showcase his groundbreaking work in memory technology.

Latest Patents:

Lee's recent patents demonstrate his proficiency in developing cutting-edge memory devices. One such invention is the "Memory Device and Operating Method Thereof." This invention introduces a memory block comprising multiple memory cells and a peripheral circuit. The memory cells undergo programming using a hole injection method, while erasing is achieved through an electron charging method. Through these operations, the memory cells can be programmed or erased effectively, enhancing overall device performance.

Another remarkable patent is the "Semiconductor Memory Device Performing Read Operation and Method for the Semiconductor Memory Device." This invention introduces a cell string connected to a peripheral circuit, consisting of drain and source select transistors, along with multiple memory cells. With optimized word line voltage application and channel region voltage control, the peripheral circuit allows for efficient read operations, providing improved data retrieval from selected memory cells.

Career Highlights:

Hee Youl Lee has had an illustrious career, working with esteemed organizations in the semiconductor industry. Notably, Lee has made valuable contributions to SK hynix Inc. and Hynix Semiconductor Inc., two prominent players in the memory chip market. Through his extensive knowledge and dedication, he has brought innovative concepts to fruition, shaping memory technology advancements.

Collaborations:

Throughout his professional journey, Hee Youl Lee has collaborated with exceptional individuals in the field of memory device innovation. Noteworthy collaborations include Ji Hyun Seo and Hee Hyun Chang. These partnerships have fostered an environment of collective innovation, capitalizing on each individual's strengths to develop groundbreaking memory solutions.

Conclusion:

Hee Youl Lee's outstanding contributions to memory device technology have solidified his reputation as a mastermind in the field. With 165 patents to his name, his recent inventions highlight his expertise in developing efficient memory devices, optimizing programming and erasing operations, and improving data retrieval techniques. Collaborating with notable industry peers, Lee's contributions continue to shape the trajectory of memory technology advancements. Keep an eye on this visionary innovator as he continues to push the boundaries of what is possible in the world of memory devices.

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