Semiconductor memory device for applying voltage to select line based on number of times program loops are performed and method of operating the same

Abstract

A method of operating a semiconductor memory device includes performing a plurality of program loops for programming selected memory cells among a plurality of memory cells. Each of the plurality of program loops includes a program phase and a verify phase. The program phase includes setting a state of a select line connected to a selected memory block including the selected memory cells, wherein setting the state of the select line connected to the selected memory block comprises applying a voltage to the select line based on a program progress state of the selected memory cells, setting a state of a bit line connected to the selected memory block, applying a program voltage to a selected word line among word lines connected to the selected memory block and applying a pass voltage to an unselected word line.