Hsing-Ya Tsao

Title: Hsing-Ya Tsao: Innovator in Low-Voltage PMOS NVSRAM Technology

Introduction

Hsing-Ya Tsao is a prominent inventor based in San Jose, California, with an impressive portfolio that includes 79 patents. His advancements in the field of memory solutions, especially with low-voltage NVSRAM technologies, showcase his significant contributions to modern electronic design.

Latest Patents

Hsing-Ya Tsao's latest patents include the groundbreaking invention of a low-voltage fast-write PMOS NVSRAM cell. This innovative design features a 12T or 14T PMOS NVSRAM cell structure that integrates a 6T low-voltage SRAM cell with pairs of 3T or 4T high-voltage PMOS Flash strings. The key advantage lies in the reverse threshold voltage definition of PMOS and NMOS flash cells, allowing for data polarity consistency during write operations. Additionally, the PMOS NVSRAM's design employs a low-current Fowler-Nordheim tunneling scheme, enabling rapid data programming and erasure at high densities up to 100 Mb. This results in straightforward low-voltage operations at 1.2V, facilitating efficient flash data loading into SRAM cells during power-on periods.

Another notable innovation is the 10T NVSRAM cell, which utilizes a bottom high-voltage NMOS select transistor. This cell enhances the recall operation by reading stored threshold voltage states of flash transistors within each SRAM cell through a charge-sensing scheme. This advanced method allows operations irrespective of the SRAM's power line voltage ramping rate and enhances the flexibility and efficiency of the store and recall processes.

Career Highlights

Throughout his illustrious career, Hsing-Ya Tsao has worked with esteemed companies such as Aplus Flash Technology, Inc. and Aplus Integrated Circuits, Inc. His innovative designs have significantly impacted the development of advanced memory technologies, driving improvements in power efficiency and data handling capabilities.

Collaborations

Hsing-Ya Tsao has collaborated with notable colleagues including Peter Wung Lee and Fu-Chang Hsu. These partnerships reflect the collaborative nature of innovation in the tech industry, emphasizing teamwork in developing cutting-edge solutions.

Conclusion

Hsing-Ya Tsaos contributions to the field of memory technology and his prolific patent portfolio underscore his role as a leading inventor. With continued innovations in low-voltage PMOS NVSRAM solutions, he exemplifies the dynamic nature of the ever-evolving tech landscape. His work not only advances technological capabilities but also inspires future generations of engineers and inventors.