The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Aug. 12, 2013
Hsing-ya Tsao, San Jose, CA (US);
Peter Wung Lee, Saratoga, CA (US);
Hsing-Ya Tsao, San Jose, CA (US);
Peter Wung Lee, Saratoga, CA (US);
Abstract
This invention discloses a low-voltage fast-write 12T or 14T PMOS NVSRAM cell structure which comprises a 6T LV SRAM cell and one pairs of two 3T or 4T HV PMOS Flash strings. Due to reverse threshold voltage definition of PMOS and NMOS flash cell, this PMOS NVSRAM cell has the advantage over the NMOS NVSRAM cell to have the same data polarity between SRAM and Flash pairs during the data writing operation. In addition, this PMOS NVSRAM's PMOS Flash cell uses similar low-current FN-tunneling scheme as NMOS NVSRAM, thus the fast data program and erase can be achieved in a big density up to 100 Mb simultaneously. As a result, low power voltage operation of NVSRAM with 1.2V VDD can be much easier to be designed without coupling the FSL line to any VDD level during the flash data loading into SRAM cell during a power-on period.