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For the Inventor, By the Inventor

Freiburg, Germany

Fritz G Adam

USPTO Granted Patents = 19

Average Co-Inventor Count = 1.0

ph-index = 9

Forward Citations = 346(Granted Patents)


Location History:

  • Freiburg i. Br, DE (1978)
  • Freiburg, DE (1976 - 1987)

Company Filing History:

goldMedal18 out of 767 
 
Itt Industries, Inc.
 patents
silverMedal1 out of 173 
 
Deutsche Itt Industries Gmbh
 patents

Years Active: 1976-1987

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19 patents (USPTO):Explore Patents
1. 4686558 - CMOS memory cell having an electrically floating storage gate (1987-08-11),
2. 4597000 - Floating-gate memory cell (1986-06-24),
3. 4580247 - Semiconductor floating gate memory cell (1986-04-01),
4. 4511881 - Integrated voltage divider with selection circuit (1985-04-16),
5. 4503342 - Low power push-pull CMOS driver circuit (1985-03-05),
6. 4499388 - Selection circuit for three or four potentials (1985-02-12),
7. 4493058 - Integrated circuit for writing, reading and erasing memory matrices with (1985-01-08),
8. 4491839 - CMOS Selection circuit (1985-01-01),
9. 4451744 - Monolithic integrated reference voltage source (1984-05-29),
10. 4425631 - Non-volatile programmable integrated semiconductor memory cell (1984-01-10),
11. 4295150 - Storage transistor (1981-10-13),
12. 4288863 - Programmable semiconductor memory cell (1981-09-08),
13. 4281261 - Integrated IGFET constant current source (1981-07-28),
14. 4251829 - Insulated gate field-effect transistor (1981-02-17),
15. 4196441 - Semiconductor storage cell (1980-04-01),

Title: Innovations in Memory Technology: The Contributions of Fritz G Adam

Introduction

Fritz G Adam, an accomplished inventor based in Freiburg, Germany, has made significant contributions to the field of memory technology, holding a total of 19 patents. His work has been instrumental in advancing the design and functionality of memory cells, which are crucial components in modern electronic devices.

Latest Patents

Among his most notable patents is a breakthrough in CMOS memory cell technology. This innovation features an electrically floating storage gate that allows for an efficient reading process that does not require significant DC power. The design incorporates a source-drain series arrangement of field-effect select transistors, along with a complementary pair of memory transistors, effectively optimizing memory performance.

Another key invention is the floating-gate memory cell. This memory cell comprises a selection transistor and a memory transistor formed as insulated gate field-effect transistors. It consists of a substrate with channels that enhance programming and reading capabilities, utilizing a thin film window and an insulated floating gate to significantly improve functionality.

Career Highlights

Fritz G Adam has garnered extensive experience, having worked at Itt Industries, Inc. and Deutsche Itt Industries GmbH. His involvement in these companies allowed him to apply his innovative ideas in professional settings, contributing to the advancement of memory technology in the electronics industry.

Collaborations

Throughout his career, Adam has collaborated with various professionals, notably working alongside Hermannus Schat. These collaborations have fostered an environment of innovation and have likely influenced the creation of several of his impactful patents.

Conclusion

Fritz G Adam's contributions to memory technology through his numerous patents showcase the importance of innovation in the electronics industry. His inventions not only enhance memory performance but also pave the way for future advancements in this field. As technology continues to evolve, the impact of Adam’s work remains significant in the landscape of modern electronics.

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