The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1985
Filed:
Apr. 30, 1982
Fritz G Adam, Freiburg, DE;
ITT Industries, Inc., New York, NY (US);
Abstract
In a circuit for selecting a random number (N) of potentials (Ui . . . ), which is integrated in accordance with the complementary insulated-gate field-effect transistor technique, one transmission gate (G . . . ) is associated with each potential, with the switching section of the gate lying between the potential (Ui . . . ) and the output (U), and the two control inputs of the respective transmission gate (G . . . ) are connected either directly or via a respectively associated inverter (I . . . ) to the corresponding output of a CMOS-1-ex-n-decoder. This decoder may consist of a 1-ex-n-open-circuit-decoder (SD) and of a 1-ex-n-short-circuit decoder (KD) whose address inputs are connected in pairs to one another and whose like outputs (1 . . . 8) are connected to one another. The open-circuit decoder (SD) consists of transistors (TP) of the one channel conductivity type, and the short-circuit decoder (KD) consists of transistors (TN) of the other channel conductivity type.