The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 1986
Filed:
Sep. 20, 1982
Applicant:
Inventor:
Fritz G Adam, Freiburg, DE;
Assignee:
ITT Industries, Inc., New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 235 ; 357 54 ; 357 41 ; 365185 ;
Abstract
A memory cell includes a selection transistor and a memory transistor formed as insulated gate field effect transistors. The transistors are formed on a substrate with a channel for the selection transistor coupled to a channel for the memory transistor. A layer of oxide overlies both transistors. The channels are formed between a programming line and a reading line formed in the substrate. A thin film window in the oxide overlies a region of the programming line. An insulated, floating gate is formed overlying the window and the channel of the memory transistor. A gate electrode overlies the floating gate and the channel of the selection transistor.