The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1987
Filed:
Sep. 01, 1983
Fritz G Adam, Freiburg, DE;
ITT Industries, Inc., New York, NY (US);
Abstract
An electrically programmable memory cell contains a source-drain series arrangement of a field-effect select transistor arrangement and a complementary pair of memory transistors arranged between a first bit line and a second bit line. The pair of memory transistors comprises a common electrically floating storage gate and a common control gate which is connected to one programming line. Each of the electrodes of the select transistors is connected to the row selecting line associated therewith. The drain regions which are connected to one another, are lead to a read line. The memory cell according to the invention permits reading without requiring any significant DC power, and programming by using the complete programming voltage as available.