The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1981
Filed:
May. 21, 1979
Applicant:
Inventor:
Fritz G Adam, Freiburg, DE;
Assignee:
ITT Industries, Inc., New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307270 ; 307297 ; 307304 ; 323315 ;
Abstract
The circuit of the current source comprises two enhancement IGFET pairs connected in series and one enhancement current source IGFET. All of the IGFETs show the same conductivity (p-channel or n-channel) and the two IGFET pairs are connected between the supply voltage and the substrate. The common connection point of the first IGFET pair is connected to the gate electrode of the substrate IGFET of the second IGFET pair and the common connection point of the second IGFET pair is fed to the gate of the current source IGFET.