The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1981
Filed:
Oct. 01, 1979
Fritz G Adam, Freiburg, DE;
ITT Industries, Inc., New York, NY (US);
Abstract
A storage transistor includes a semiconductor substrate having formed therein a source region and a drain region spaced from said source region forming a channel region therebetween. A gate electrode is disposed over said channel region and a layer of storage medium has a first portion extending between the channel region and the gate electrode and a second portion extending laterally outside from between the channel region and the gate electrode, the ratio of the area of the second portion to the area of the first portion being in the range of 2 to 3. A first partial gate insulator layer is disposed between the channel region and the layer of storage medium and has a thickness ranging between 100 and 200 A.U., while a second partial gate insulator layer is disposed between the layer of storage medium and the gate electrode and has a thickness in the range of between 200 and 500 A.U. Whereby an erase or write pulse may be applied to the gate electrode for storing or removing a charge into or from the storage medium respectively and thereby displacing the threshold voltage and a read pulse may be applied to the gate electrode for scanning the magnitude of the threshold voltage.