The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1981
Filed:
Oct. 01, 1979
Fritz G Adam, Freiburg, DE;
ITT Industries, Inc., New York, NY (US);
Abstract
An insulated gate field-effect transistor is formed with an intermediate floating gate disposed between the gate electrode and the channel region, said floating gate including a control part extending laterally from between the gate electrode and channel region. Said intermediate floating gate including said control part are embedded in partial layers of dielectric material, said dielectric material electrically isolating said control part from at least one auxiliary electrode to which a voltage may be fed with respect to the substrate for capacitive coupling to the control part whereby the threshold voltage of the insulated gate field-effect transistor may be adjusted within a limited range.