logo

For the Inventor, By the Inventor

Reston, VA, United States of America

Francisco H De La Moneda

USPTO Granted Patents = 15

Average Co-Inventor Count = 1.5

ph-index = 11

Forward Citations = 307(Granted Patents)


Location History:

  • Reston, VA (US) (1976 - 1979)
  • Stormville, NY (US) (1981)
  • Tucson, AZ (US) (1984)

Company Filing History:

goldMedal15 out of 164,219 
 
International Business Machines Corporation
 patents

Years Active: 1976-1984

Loading Chart...
15 patents (USPTO):Explore Patents
1. 4458406 - Making LSI devices with double level polysilicon structures (1984-07-10),
2. 4445267 - MOSFET Structure and process to form micrometer long source/drain spacing (1984-05-01),
3. 4280855 - Method of making a dual DMOS device by ion implantation and diffusion (1981-07-28),
4. 4149906 - Process for fabrication of merged transistor logic (MTL) cells (1979-04-17),
5. 4139935 - Over voltage protective device and circuits for insulated gate (1979-02-20),
6. 4138782 - Inverter with improved load line characteristic (1979-02-13),
7. 4115794 - Charge pumping device with integrated regulating capacitor and method (1978-09-19),
8. 4102733 - Two and three mask process for IGFET fabrication (1978-07-25),
9. 4102714 - Process for fabricating a low breakdown voltage device for polysilicon (1978-07-25),
10. 4078243 - Phototransistor array having uniform current response and method of (1978-03-07),
11. 4072868 - FET inverter with isolated substrate load (1978-02-07),
12. 4072545 - Raised source and drain igfet device fabrication (1978-02-07),
13. 4029522 - Method to fabricate ion-implanted layers with abrupt edges to reduce the (1977-06-14),
14. 4016587 - Raised source and drain IGFET device and method (1977-04-05),
15. 3958323 - Three mask self aligned IGFET fabrication process (1976-05-25),

Title: **Innovator Francisco H De La Moneda: Pioneering Advances in Semiconductor Technology**

Introduction

Francisco H De La Moneda is an accomplished inventor based in Reston, VA, with a significant contribution to the field of semiconductor technology. With an impressive portfolio of 15 patents, he has played a vital role in the development of innovative solutions that enhance the capabilities of integrated circuit structures. His work is particularly valuable in improving the performance of MOS field effect transistor (MOSFET) arrays.

Latest Patents

Among his latest patents, two stand out due to their groundbreaking advancements. The first patent focuses on "Making LSI devices with double level polysilicon structures." It addresses the limitations posed by the high resistance of diffused electrical interconnection lines in MOSFET arrays. By utilizing an additional interconnection level from conventional double-layer polysilicon processes, he introduces a polycrystalline grid that significantly mitigates ground resistance, thereby increasing the efficiency of MOSFET ROM structures.

The second patent, titled "MOSFET Structure and process to form micrometer long source/drain spacing," details a method for fabricating semiconductor structures with sub-micrometer gate lengths. This invention includes a complex process of forming isolation patterns in semiconductor substrates, followed by the application of multilayer structures to create precise, effective field effect transistor devices. The innovative approach allows for enhanced device performance, meeting the demands of modern technology.

Career Highlights

Francisco H De La Moneda is currently associated with the International Business Machines Corporation (IBM), a leading company in the technology sector. His innovative contributions have not only earned him multiple patents but have also established him as a key figure in advancing semiconductor technology. His expertise in designing and fabricating integrated circuits has significantly impacted the industry.

Collaborations

Throughout his career, Francisco has collaborated with noted colleagues such as Harish N Kotecha and Claude Louis Bertin. Working alongside these esteemed professionals, he has collectively driven advancements in technology and innovation, leading to remarkable patents that address contemporary challenges within the semiconductor field.

Conclusion

In summary, Francisco H De La Moneda stands out as an influential inventor with meaningful contributions to the semiconductor industry. His innovative patents exemplify his commitment to improving technology and the efficiency of integrated circuits. As the landscape of technology continues to evolve, his work remains a vital part of the advancement in semiconductor research and development.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…