The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 1979
Filed:
Mar. 29, 1977
Claude L Bertin, Oakton, VA (US);
Francisco H De La Moneda, Reston, VA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Protective devices and circuits for insulated gate transistors are improved by another p/n junction diode or MOS diode preventing breakdown of the thin oxide of the protective device. The breakdown voltage of the protective device or p/n diode may be tailored to a preselected voltage by altering its metallurgical junction by ion implantation or other techniques. Tailoring permits the breakdown voltage of the protective device to be independent of process and circuit specification of a protected or internal circuit. A plurality of parallel circuits connected as a protective device limits or controls secondary breakdown of the protective device.