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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4102714 B1

PDFFull Text
Date of Patent:
Jul. 25, 1978

Filed:

Apr. 23, 1976

Process for fabricating a low breakdown voltage device for polysilicon

Applicant:
Inventors:

David E DeBar, Manassas, VA (US);

Francisco H De La Moneda, Reston, VA (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Hoel; John E.

Primary Examiner:

R Dean

Assistant Examiner:

W G Saba

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 29571 ; 2957 / ; 29578 ; 29580 ; 148174 ; 148175 ; 156647 ; 156653 ; 156657 ; 156662 ; 357 13 ; 357 20 ; 357 23 ; 357 41 ; 357 55 ; 357 59 ; 357 60 ;
Abstract

A structure and process are disclosed for making a low-voltage breakdown p-n junction in a semiconductor substrate. The process comprises the step of etching a V-shaped groove in a semiconductor substrate of a first conductivity type, with an anistropic etchant, followed by depositing a layer of epitaxial semiconductor material of a second conductivity type in the V-shaped groove. There results a p-n junction with a small radius of curvature at the apex of the V-shaped groove having a correspondingly low breakdown voltage.

Find Patent Forward Citations

DeBar, David. (1978). Process for fabricating a low breakdown voltage device for polysilicon (U.S. Patent No. 4102714). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4102714

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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