The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1978
Filed:
Apr. 23, 1976
Applicant:
Inventors:
David E DeBar, Manassas, VA (US);
Francisco H De La Moneda, Reston, VA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 29571 ; 2957 / ; 29578 ; 29580 ; 148174 ; 148175 ; 156647 ; 156653 ; 156657 ; 156662 ; 357 13 ; 357 20 ; 357 23 ; 357 41 ; 357 55 ; 357 59 ; 357 60 ;
Abstract
A structure and process are disclosed for making a low-voltage breakdown p-n junction in a semiconductor substrate. The process comprises the step of etching a V-shaped groove in a semiconductor substrate of a first conductivity type, with an anistropic etchant, followed by depositing a layer of epitaxial semiconductor material of a second conductivity type in the V-shaped groove. There results a p-n junction with a small radius of curvature at the apex of the V-shaped groove having a correspondingly low breakdown voltage.