The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1978
Filed:
May. 21, 1976
Applicant:
Inventor:
Francisco H De La Moneda, Reston, VA (US);
Assignee:
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 148-15 ; 29571 ; 156643 ; 156649 ; 156657 ; 156662 ;
Abstract
Disclosed is an integrated circuit field effect transistor having a source and drain which protrude above the silicon substrate so as to create shallow junctions with the substrate while maintaining a relatively low sheet resistivity in the region. Two self-aligned source and drain fabrication processes are disclosed for the device. The first process yields a polysilicon field shield and the second process yields a field region composed of thermal silicon dioxide.