The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1977
Filed:
Jun. 30, 1976
Applicant:
Inventor:
Francisco H De La Moneda, Reston, VA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 148 188 ; 357 91 ;
Abstract
A method is disclosed to implant layers in semiconductor substrates with asymmetrical edges, that is, one edge slopes towards the surface of the substrate and the other terminates abruptly inside the bulk. The method involves using lift-off techniques to make ion-stopping masks with near-vertical sidewalls which delineate the abrupt edges of the ion-implanted layers. The application of this method to fabricate Schottky barrier FET's and bipolar transistors yields devices with reduced parasitic resistance without adversely impacting other related electrical parameters such as breakdown voltage and capacitance.