San Jose, CA, United States of America

Feng Li

This inventor holds 16 USPTO granted patents and 5 published patent applications and 1 EPO patent. Top assignees: L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude, Sandisk 3D LLC, Photonify Technologies, Inc.. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng Li. Retrieved from https://idiyas.com/inventor/feng-li-324gibnw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 68.8

 

Average Co-Inventor Count = 5.1

ph-index = 4

Forward Citations = 254(Granted Patents)


Company Filing History:


Years Active: 2003-2026

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16 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Feng Li

Introduction

Feng Li is a prominent inventor based in San Jose, California, known for his significant contributions to the field of thin film deposition processes. With a remarkable portfolio of 15 patents, he has made strides in advancing technologies that are crucial for various applications in materials science.

Latest Patents

Feng Li's latest patents include innovative processes that enhance the efficiency of thin film deposition. One notable patent involves reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes. This process entails reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the precursor. The result is the formation of a metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to both the metal oxyhalide precursor and the oxophilic reagent either simultaneously or sequentially, followed by exposure to a reducing agent after deoxygenation.

Another significant patent focuses on tungsten pentachloride conditioning and crystalline phase manipulation. This process details how to condition tungsten pentachloride to form specific crystalline phases, which allow for stable vapor pressures over extended periods during vapor deposition and etching processes.

Career Highlights

Feng Li has worked with notable companies such as SanDisk 3D LLC and L'Air Liquide Société Anonyme Pour L'Étude et L'Exploitation des Procédés Georges Claude. His experience in these organizations has contributed to his expertise in the field and has enabled him to develop groundbreaking technologies.

Collaborations

Feng Li has collaborated with esteemed colleagues, including Xiaoyu Yang and Jean-Marc Girard, to further enhance his research and development efforts. Their combined expertise has led to innovative solutions in the realm of thin film deposition.

Conclusion

Feng Li's contributions to the field of thin film deposition are noteworthy, with a strong portfolio of patents that reflect his innovative spirit. His work continues to influence advancements in materials science and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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