The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 14, 2014
Applicant:
Sandisk 3d Llc, Milpitas, CA (US);
Inventors:
Xiaoyu Yang, Saratoga, CA (US);
Roy E. Scheuerlein, Cupertino, CA (US);
Feng Li, San Jose, CA (US);
Albert T. Meeks, Sunnyvale, CA (US);
Assignee:
SanDisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 45/00 (2006.01); G11C 17/16 (2006.01); H01L 27/10 (2006.01); G11C 17/00 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); G11C 17/16 (2013.01); H01L 23/5252 (2013.01); H01L 27/101 (2013.01); H01L 45/146 (2013.01); G11C 17/00 (2013.01); H01L 45/04 (2013.01);
Abstract
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.