The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Feb. 06, 2009
Xiaoyu Yang, Campbell, CA (US);
Roy E. Scheuerlein, Cupertino, CA (US);
Feng LI, San Jose, CA (US);
Albert T. Meeks, Sunnyvale, CA (US);
Xiaoyu Yang, Campbell, CA (US);
Roy E. Scheuerlein, Cupertino, CA (US);
Feng Li, San Jose, CA (US);
Albert T. Meeks, Sunnyvale, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.