Feng Han

Title: The Innovative Contributions of Feng Han

Introduction

Feng Han is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of integrated circuits and semiconductor technology. With a total of seven patents to his name, Feng Han has established himself as a key figure in innovation.

Latest Patents

Feng Han's latest patents include groundbreaking technologies. One of his notable inventions is the "LDMOS with enhanced safe operating area and method of manufacture." This patent describes an integrated circuit that features an n-type drift region, a gate structure directly on a portion of the drift region, and a drain structure formed in another portion. The design includes a resist protective oxide and a field plate contact for improved electrical connection. Another significant patent is the "Pin diode detector, method of making the same, and system including the same." This invention outlines a PIN diode detector that incorporates multiple PIN diode wells and a field stop ring well, enhancing its functionality and efficiency.

Career Highlights

Feng Han has worked with notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and TSMC China Company Limited. His experience in these organizations has contributed to his expertise and innovative capabilities.

Collaborations

Feng Han has collaborated with talented individuals in his field, including Jian Wu and Shuai Zhang. These partnerships have fostered a creative environment that has led to the development of advanced technologies.

Conclusion

Feng Han's contributions to the field of integrated circuits and semiconductor technology are noteworthy. His innovative patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in technology and inspire future innovations.