The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
May. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company, Limited, Shanghai, CN;
Lianjie Li, Hsinchu, TW;
Feng Han, Hsinchu, TW;
Lu Zhang, Hsinchu, TW;
Shengtian Lu, Hsinchu, TW;
LinChun Gui, Hsinchu, TW;
Chenglin Zhang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
TSMC CHINA COMPANY, LIMITED, Shanghai, CN;
Abstract
A PIN diode detector includes a substrate. The PIN diode detector further includes a plurality of PIN diode wells in a pixel region, wherein each of the plurality of PIN diode wells has a first dopant type. The PIN diode detector further includes a connecting ring well and a plurality of floating ring wells in a peripheral region, wherein the connecting ring well and plurality of floating ring wells have the first dopant type. The PIN diode detector further includes a field stop ring well surrounding the plurality of floating ring wells, wherein the field stop ring well has a second dopant type opposite the first dopant type. The PIN diode detector further includes a blanket doped region. The blanket doped region extends continuously through an entirety of the pixel region and an entirety of the peripheral region, and the blanket doped region has the second dopant type.