The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Aug. 10, 2023
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Tsmc China Company, Limited, Songjiang, CN;

Inventors:

Lianjie Li, Hsinchu, TW;

Feng Han, Hsinchu, TW;

Jian-Hua Lu, Hsinchu, TW;

Yanbin Lu, Hsinchu, TW;

Shui Liang Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01);
Abstract

An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.


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