The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Aug. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company, Limited, Shanghai, CN;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC CHINA COMPANY, LIMITED, Shanghai, CN;
Abstract
An integrated circuit includes a substrate and a semiconductor material layer over the substrate. The integrated circuit includes a first source structure in the semiconductor material layer. The first source structure includes a first doped well. The integrated circuit includes a drain structure in the semiconductor material layer. The drain structure includes a second doped well. The integrated circuit includes a second source structure in the semiconductor material layer. The second source structure includes a third doped well. The drain structure is between the first source structure and the second source structure. The integrated circuit includes a first deep trench isolation (DTI) extending through the first doped well; and a first thermal contact extending through the first DTI. The thermal contact is in direct contact with the substrate. The first DTI is between the thermal contact and the first doped well.