Company Filing History:
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Years Active: 2001-2012
Title: **Faran Nouri: Innovator in NMOS Transistor Technology**
Introduction
Faran Nouri is a distinguished inventor based in Los Altos, California, with a remarkable portfolio of 13 patents. His contributions to the field of transistor technology demonstrate not only his expertise but also his commitment to advancing semiconductor innovation.
Latest Patents
Among his recent inventions are patents focused on NMOS transistor devices and the methods for fabricating them. His innovations include NMOS transistors with controlled channel strain and junction resistance. These patents provide detailed methods for creating an NMOS transistor that features a transistor stack composed of a gate dielectric and gate electrode above a p-type silicon region. Additionally, the source/drain regions are designed on both sides of the transistor stack, with a specific architecture that enhances performance through the integration of advanced silicon layers. Another significant innovation is related to manufacturing transistors while modulating channel stress through altering stress parameters specifically for PMOS and NMOS transistors.
Career Highlights
Faran has worked with leading companies in the technology sector, including Applied Materials, Inc. and Philips Semiconductors Inc. His experiences in these reputable firms have contributed significantly to his invention prowess, allowing him to apply practical knowledge in the development of cutting-edge technologies.
Collaborations
Throughout his career, Faran has collaborated with notable professionals, including Lori D. Washington and Sunderraj Thirupapuliyur. Their collective expertise in semiconductor technology has played an essential role in the successful implementation of innovative methodologies and solutions.
Conclusion
Faran Nouri continues to be a prominent figure in the field of semiconductor innovation. His 13 patents and groundbreaking work on NMOS transistors illustrate his dedication to pushing the boundaries of technology. As the industry evolves, Faran's contributions will remain integral to the future of transistor design and fabrication.