The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Dec. 18, 2006
Christopher Olsen, Fremont, CA (US);
Faran Nouri, Los Altos, CA (US);
Thai Cheng Chua, San Jose, CA (US);
Christopher Olsen, Fremont, CA (US);
Faran Nouri, Los Altos, CA (US);
Thai Cheng Chua, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A SiONgate dielectric and a method for forming a SiONgate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NHand then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure is annealed after it is exposed to a plasma comprising a nitrogen source. In another aspect, a SiONgate dielectric is formed in an integrated processing system by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NHin one chamber of the integrated processing system and then exposing the structure to a plasma comprising a nitrogen source in another chamber of the integrated processing system.