The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Jun. 23, 2006
Faran Nouri, Los Altos, CA (US);
Eun-ha Kim, Menlo Park, CA (US);
Sunderraj Thirupapuliyur, Sunnyvale, CA (US);
Vijay Parihar, Fremont, CA (US);
Faran Nouri, Los Altos, CA (US);
Eun-Ha Kim, Menlo Park, CA (US);
Sunderraj Thirupapuliyur, Sunnyvale, CA (US);
Vijay Parihar, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for reducing contact resistance in semiconductor devices are provided in the present invention. In one embodiment, the method includes providing a substrate having semiconductor device formed thereon, wherein the device has source and drain regions and a gate structure formed therein, performing a silicidation process on the substrate by a thermal annealing process, and performing a laser anneal process on the substrate. In another embodiment, the method includes providing a substrate having implanted dopants, performing a silicidation process on the substrate by a thermal annealing process, and activating the dopants by a laser anneal process.