The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Nov. 02, 1999
Tammy Zheng, Fremont, CA (US);
Faran Nouri, Los Altos, CA (US);
Philips Semiconductors, Inc., Tarrytown, NY (US);
Abstract
A method of forming a semiconductor device minimizes oxide recessing in a trench of a semiconductor device. In one embodiment, forming a nitride spacer surrounding the top trench corner oxide in a shallow trench isolation region protects the corner oxide from being etched during processing. Oxide recessing in the trench is undesirable since it results in high electric fields around the sharp top corners of the trenches and V,roll-off of the transistors. According to one example embodiment, STI regions filled with an HDP oxide and having undergone planarization, are masked. The masking substantially covers the HDP oxide and overlaps at least portions of nitride regions. Unmasked areas of the nitride regions are etched away forming nitride spacers on both sides of the HDP oxide fill.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile