The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Feb. 03, 1999
Faran Nouri, Los Altos, CA (US);
Philips Semi-Conductor, Inc., Tarrytown, NY (US);
Abstract
An ion implanting process allows for shallow source and drain junctions of the transistor. According to one example embodiment, a BARC layer is formed over a gate, and a poly-crystalline or amorphous silicon shield is deposited over the source and drain regions, then the BARC and silicon are chemically mechanically polished. The poly-crystalline or amorphous silicon shield absorbs the initial impact the dopant species of ion implantation and reduces the incidence of irreversible source/drain crystal damage caused by the process. After the ion implantation, the species implanted in the poly or amorphous silicon is diffused into the source/drain regions by annealing. An additional siliciding of the poly or amorphous silicon covering the source and drain minimizes the need for deeper source/drain junctions and hence improves short-channel properties.