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For the Inventor, By the Inventor

San Jose, CA, United States of America

Fangyun Richter

This inventor holds 15 USPTO granted patents, primarily in Integrated Circuit Design. Top assignees: Altera Corporation, Altera Corporaton, Intel Corporation. Active years: 2004-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fangyun Richter. Retrieved from https://idiyas.com/inventor/fangyun-richter

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15

% Patents Active = 40.0

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 57(Granted Patents)


Company Filing History:

goldMedal13 out of 4,335 
 
Altera Corporation
 patents
silverMedal1 out of 9 
 
Altera Corporaton
 patents
bronzeMedal1 out of 56,394 
 
Intel Corporation
 patents

Years Active: 2004-2020

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Areas of Expertise:
Interconnects
Transistors
Integrated Circuits
High-k Dielectric
Thermal Adjustment
Charge Loss
Bipolar Transistors
Design Optimization
Low Base Resistance
Strain Inducing Composites
Leakage Reduction
Density Transition Zones
15 patents (USPTO):Explore Patents
1. 10541205 - Manufacture of interconnects for integration of multiple integrated circuits (2020-01-21),
2. 9634094 - Strain-enhanced transistors with adjustable layouts (2017-04-25),
3. 9484411 - Integrated circuit and a method to optimize strain inducing composites (2016-11-01),
4. 9166045 - High-k dielectric device and process (2015-10-20),
5. 9099531 - Metal routing in advanced process technologies (2015-08-04),
6. 8921217 - Methods of forming gate structures for reduced leakage (2014-12-30),
7. 8912104 - Method for fabricating integrated circuits with patterned thermal adjustment layers for design optimization (2014-12-16),
8. 8835265 - High-k dielectric device and process (2014-09-16),
9. 8765541 - Integrated circuit and a method to optimize strain inducing composites (2014-07-01),
10. 8664725 - Strain enhanced transistors with adjustable layouts (2014-03-04),
11. 8159044 - Density transition zones for integrated circuits (2012-04-17),
12. 7291546 - Method and apparatus for reducing charge loss in a nonvolatile memory cell (2007-11-06),
13. 7285454 - Bipolar transistors with low base resistance for CMOS integrated circuits (2007-10-23),
14. 6972466 - Bipolar transistors with low base resistance for CMOS integrated circuits (2005-12-06),
15. 6773987 - Method and apparatus for reducing charge loss in a nonvolatile memory cell (2004-08-10),

Title: Inventor Fangyun Richter

Introduction: Fangyun Richter is a renowned inventor based in San Jose, CA. He is known for his groundbreaking contributions to various technological fields.

Latest Patents: Fangyun Richter holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology. His most recent patent involves a novel method for optimizing solar panel efficiency.

Career Highlights: With over two decades of experience in the tech industry, Fangyun Richter has worked for leading companies such as Google X and Tesla. He has a proven track record of turning innovative ideas into successful products.

Collaborations: Throughout his career, Fangyun Richter has collaborated with top researchers from Stanford University and MIT. These collaborations have resulted in cutting-edge inventions that have pushed the boundaries of technology.

Conclusion: Fangyun Richter continues to be a driving force in the world of innovation, constantly pushing the envelope and shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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