The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Feb. 14, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ning Cheng, San Jose, CA (US);

Fangyun Richter, San Jose, CA (US);

Andy Louie Lee, San Jose, CA (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2017.01); H01L 23/528 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/4853 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 27/115 (2013.01);
Abstract

Fabrication methods for monolithic dies that integrate multiple integrated circuits, such as System-on-Chips are described. A substrate having an interconnect may be coupled via electrical terminations to the integrated circuits. Fabrication methods provide multiple electrical termination regions on a surface, with each region having geometrical properties that are appropriate for the coupled integrated circuit. Electrical terminations with different directions may be produced employing a single reactive ion etching process under conditions that enhance micro loading effects during fabrication.


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