The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Nov. 20, 2009
Applicants:

Shuxian Chen, Fremont, CA (US);

Fangyun Richter, San Jose, CA (US);

Bradley Jensen, San Jose, CA (US);

Yowjuang (Bill) Liu, San Jose, CA (US);

Inventors:

Shuxian Chen, Fremont, CA (US);

Fangyun Richter, San Jose, CA (US);

Bradley Jensen, San Jose, CA (US);

Yowjuang (Bill) Liu, San Jose, CA (US);

Assignee:

Altera Corporation, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit is provided with a spiral inductor and a transition zone surrounding the spiral inductor. The transition zone may have a geometry that is substantially eight-sided or octagonal. Metal layers in the transition zone may have metal fill that is substantially octagonal and arranged in rows and columns. If desired, square or rectangular metal fill be tiled with the substantially octagonal metal fill. Metal layers may also contain halved or quartered octagonal metal fill. Substrate in the transition zone may have octagonal substrate regions separated by shallow trench isolation regions. A polysilicon layer above the substrate may have square regions of polysilicon fill directly above the shallow trench regions in the substrate. Such arrangements may provide more uniform densities in transition zones with certain geometries.


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