The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Aug. 29, 2014
Altera Corporation, San Jose, CA (US);
Che Ta Hsu, San Jose, CA (US);
Fangyun Richter, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Jeffrey Xiaoqi Tung, Palo Alto, CA (US);
Altera Coporation, San Jose, CA (US);
Abstract
In an illustrative embodiment, holes are formed in an insulating layer where the gates of NMOS and PMOS transistors are to be formed; and a hard mask spacer layer is formed on the exposed surfaces. Next, spacers are formed on the sidewalls of the holes by anisotropically etching the spacer layer to remove the portion of the spacer layer exposed at the bottom of each hole while leaving some of the spacer layer formed on the sidewalls of the holes. A high-k dielectric layer is then formed between the spacers; and a metal layer is formed on the high-k dielectric layer. Bulk metal layer is then formed on the metal layer. Chemical mechanical polishing is performed to remove the bulk gate metal down to the insulating layer, thereby isolating individual NMOS and PMOS gate structures.