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Busto Arsizio, Italy

Fabrizio Fausto Renzo Toia

This inventor holds 13 USPTO granted patents and 9 published patent applications and 4 EPO patents. Top assignee: Stmicroelectronics S.r.l.. Active years: 2011-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fabrizio Fausto Renzo Toia. Retrieved from https://idiyas.com/inventor/fabrizio-fausto-renzo-toia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13 

% Patents Active = 92.3

 

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:

goldMedal13 out of 5,694 
 
Stmicroelectronics S.r.l.
 patents

Years Active: 2011-2022

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13 patents (USPTO):Explore Patents
1. 11469136 - Semiconductor structure with partially embedded insulation region and related method (2022-10-11),
2. 11302471 - Integrated transformer (2022-04-12),
3. 10930799 - Semiconductor die with buried capacitor, and method of manufacturing the semiconductor die (2021-02-23),
4. 10825954 - Porous-silicon light-emitting device and manufacturing method thereof (2020-11-03),
5. 10796942 - Semiconductor structure with partially embedded insulation region (2020-10-06),
6. 10541079 - Integrated transformer (2020-01-21),
7. 10535767 - Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process (2020-01-14),
8. 10236378 - Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process (2019-03-19),
9. 10236115 - Integrated transformer (2019-03-19),
10. 10062757 - Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device (2018-08-28),
11. 10002990 - Porous-silicon light-emitting device and manufacturing method thereof (2018-06-19),
12. 8796106 - Isolation trenches (2014-08-05),
13. 7999349 - Front-rear contacts of electronics devices with induced defects to increase conductivity thereof (2011-08-16),

Certainly! Here is the article about inventor Fabrizio Fausto Renzo Toia based on the provided data:

Title: The Innovative Mind of Fabrizio Fausto Renzo Toia

Introduction:

In the realm of cutting-edge technology and semiconductor advancements, Fabrizio Fausto Renzo Toia stands as a prominent figure. Hailing from Busto Arsizio, Italy, Toia's ingenious inventions have made significant strides in the field of integrated transformers and semiconductor structures.

Latest Patents:

1. Semiconductor Structure with Partially Embedded Insulation Region and Related Method: Toia's patent showcases a groundbreaking technique to produce silicon oxide regions from porous silicon, allowing for precise control over the shape and profile of the oxide regions by manipulating the P-doped silicon regions.

2. Integrated Transformer: This patent introduces an integrated transformer with primary and secondary windings in a spiral planar arrangement, featuring a unique field plate winding design for enhanced efficiency.

Career Highlights:

With an impressive portfolio of 13 patents to his name, Toia has made remarkable contributions to the semiconductor industry. Currently employed at STMicroelectronics S.r.l., his work epitomizes innovation and excellence in semiconductor technology.

Collaborations:

Collaborating with talented individuals such as Marco Morelli and Marco Sambi, Toia has fostered a culture of innovation and collaboration within STMicroelectronics S.r.l. Their collective efforts have led to groundbreaking advancements in integrated transformer design and semiconductor structures.

Conclusion:

Fabrizio Fausto Renzo Toia's relentless pursuit of innovation and his exceptional expertise in semiconductor technology have positioned him as a trailblazer in the industry. His patents reflect a deep understanding of complex engineering principles and a commitment to pushing the boundaries of technological possibility.

If you have any more specific requests or need further information, feel free to ask!

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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