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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10062757 B1

PDFFull Text
Date of Patent:
Aug. 28, 2018

Filed:

Aug. 29, 2016

Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Fabrizio Fausto Renzo Toia, Busto Arsizio, IT;

Claudio Contiero, Buccinasco, IT;

Elisabetta Pizzi, Limbiate, IT;

Simone Dario Mariani, Vedano al Lambro, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Stephen W Smoot

Assistant Examiner:

Vicki B Booker

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 23/535 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1087 (2013.01); H01L 21/0265 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); H01L 21/3247 (2013.01); H01L 21/74 (2013.01); H01L 21/743 (2013.01); H01L 23/535 (2013.01); H01L 29/1083 (2013.01); H01L 29/401 (2013.01); H01L 29/7802 (2013.01);
Abstract

A semiconductor device includes: a semiconductor body including an active region that houses an electronic component and a passive dielectric region surrounding the active region; a conductive buried region, of metallic material or metallic alloy, which extends in the semiconductor body in the active region; and one or more electrical contacts, of metallic material, which extend between the conductive buried region and a top surface of the semiconductor body, and form respective paths for electrical access to the conductive buried region.

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Toia, Fabrizio Fausto Renzo. (2018). Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device (U.S. Patent No. 10062757). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10062757

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