The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Aug. 24, 2020
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventors:
Simone Dario Mariani, Vedano al Lambro, IT;
Fabrizio Fausto Renzo Toia, Busto Arsizio, IT;
Marco Sambi, Cornaredo, IT;
Davide Giuseppe Patti, Mascalucia, IT;
Marco Morelli, Bareggio, IT;
Giuseppe Barillaro, Pisa, IT;
Assignee:
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76213 (2013.01); H01L 21/02164 (2013.01); H01L 21/02203 (2013.01); H01L 21/02238 (2013.01); H01L 21/306 (2013.01); H01L 29/0649 (2013.01); H01L 29/7824 (2013.01);
Abstract
A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.