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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10535767 B1

PDFFull Text
Date of Patent:
Jan. 14, 2020

Filed:

Jan. 31, 2019

Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Marco Sambi, Cornaredo, IT;

Fabrizio Fausto Renzo Toia, Busto Arsizio, IT;

Marco Marchesi, Borgonovo V.T., IT;

Marco Morelli, Bareggio, IT;

Riccardo Depetro, Domodossola, IT;

Giuseppe Barillaro, Pisa, IT;

Lucanos Marsilio Strambini, San Giuliano Terme, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:

Seed Intellectual Property Law Group LLP

Primary Examiner:

Elias Ullah

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/32 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/265 (2006.01); H01L 21/3063 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/02233 (2013.01); H01L 21/26513 (2013.01); H01L 21/3063 (2013.01); H01L 21/3081 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/41741 (2013.01); H01L 29/66128 (2013.01); H01L 29/66666 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/8611 (2013.01); H03K 17/687 (2013.01); H01L 21/02255 (2013.01);
Abstract

A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

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