The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Jan. 14, 2019
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Flavio Francesco Villa, Milan, IT;

Marco Morelli, Bareggio, IT;

Marco Marchesi, Piacenza, IT;

Simone Dario Mariani, Vedano Al Lambro, IT;

Fabrizio Fausto Renzo Toia, Busto Arsizio, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/945 (2013.01); H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 29/66181 (2013.01); H01L 21/0265 (2013.01); H01L 21/02639 (2013.01);
Abstract

A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.


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