The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2019

Filed:

Mar. 13, 2017
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Marco Sambi, Cornaredo, IT;

Fabrizio Fausto Renzo Toia, Busto Arsizio, IT;

Marco Marchesi, Borgonovo, IT;

Marco Morelli, Bareggio, IT;

Riccardo Depetro, Domodossola, IT;

Giuseppe Barillaro, Pisa, IT;

Lucanos Marsilio Strambini, Agrate Brianza, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/3063 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H03K 17/687 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/02233 (2013.01); H01L 21/26513 (2013.01); H01L 21/3063 (2013.01); H01L 21/3081 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/41741 (2013.01); H01L 29/66128 (2013.01); H01L 29/66666 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/8611 (2013.01); H03K 17/687 (2013.01); H01L 21/02255 (2013.01);
Abstract

An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.


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