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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10796942 B1

PDFFull Text
Date of Patent:
Oct. 06, 2020

Filed:

Aug. 20, 2018

Semiconductor structure with partially embedded insulation region

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Simone Dario Mariani, Vedano al Lambro, IT;

Fabrizio Fausto Renzo Toia, Busto Arsizio, IT;

Marco Sambi, Cornaredo, IT;

Davide Giuseppe Patti, Mascalucia, IT;

Marco Morelli, Bareggio, IT;

Giuseppe Barillaro, Pisa, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Bilkis Jahan

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76213 (2013.01); H01L 21/02164 (2013.01); H01L 21/02203 (2013.01); H01L 21/02238 (2013.01); H01L 21/306 (2013.01); H01L 29/0649 (2013.01); H01L 29/7824 (2013.01);
Abstract

A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Find Patent Forward Citations

Mariani, Simone. (2020). Semiconductor structure with partially embedded insulation region (U.S. Patent No. 10796942). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10796942

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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