Gyeonggi-do, South Korea

Eun-Seok Choi

This inventor holds 27 USPTO granted patents and 2 published patent applications and 12 EPO patents, primarily in Nonvolatile Memory Devices. Top assignees: Hynix Semiconductor Inc., Skhynix Inc., Samsung Electronics Co., Ltd.. Active years: 2003-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eun-Seok Choi. Retrieved from https://idiyas.com/inventor/eun-seok-choi-ljjjs20h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 27 

% Patents Active = 88.9

 

Average Co-Inventor Count = 2.3

ph-index = 9

Forward Citations = 221(Granted Patents)


Location History:

  • Ichon-shi, KR (2003 - 2005)
  • Ichon, KR (2007)
  • Jeongju-si, KR (2009)
  • Kyunggi-do, KR (2012)
  • Gyeonggi-do, KR (2006 - 2019)

Company Filing History:


Years Active: 2003-2019

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Areas of Expertise:
Nonvolatile Memory
3D Memory Device
Ferroelectric Memory
Semiconductor Fabrication
Vertical Semiconductor
Channel Contacts
Memory Device Methods
Stacked Gate Electrode
27 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Eun-Seok Choi

Introduction: Eun-Seok Choi is a notable inventor based in Gyeonggi-do, South Korea, with an impressive portfolio of 27 patents. His contributions to the field of nonvolatile memory devices showcase his innovative spirit and technical expertise.

Latest Patents: One of Choi's latest inventions is a nonvolatile memory device and method for fabricating the same. This device includes a substrate that comprises a first word line formation area, a second word line formation area, and a support area interposed between the two. Additionally, it features a first stacked structure positioned over the substrate of each of the word line formation areas, containing multiple interlayer dielectric layers and conductive layers alternately stacked. A second stacked structure is also present over the substrate of the support area, which includes interlayer dielectric layers and alternating spaces. The device further incorporates a channel layer located in the first stacked structure and a memory layer situated between the channel layer and each of the conductive layers.

Career Highlights: Eun-Seok Choi has made significant strides in the technology sector, having worked with prominent companies such as Hynix Semiconductor Inc. and SK hynix Inc. His tenure at these organizations has allowed him to refine his skills and push the boundaries of innovation in semiconductor technology.

Collaborations: Throughout his career, Choi has collaborated with knowledgeable peers, including Hyun-Seung Yoo and Seung-Jin Yeom. These collaborations have contributed to his development as an inventor and have enhanced the quality of his innovative projects.

Conclusion: Eun-Seok Choi stands out as a forward-thinking inventor whose work has the potential to influence the future of memory devices. With a strong track record of patents and significant contributions in the semiconductor field, his career reflects a commitment to advancing technology and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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