The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Nov. 28, 2011
Applicants:
Eun-seok Choi, Gyeonggi-do, KR;
Hyun-seung Yoo, Gyeonggi-do, KR;
Inventors:
Eun-Seok Choi, Gyeonggi-do, KR;
Hyun-Seung Yoo, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A non-volatile memory device includes a substrate including a resistor layer having a resistance lower than that of a source line, channel structures including a plurality of inter-layer dielectric layers that are alternately staked with a plurality of channel layers over the substrate, and the source line configured to contact sidewalls of the channel layers, where a lower end of the source line contacts the resistor layer.